| PART |
Description |
Maker |
| K6R4008C1D |
512Kx8 Bit High Speed Static RAM(5.0V Operating)
|
Samsung semiconductor
|
| K6R4016C1D-J |
512Kx8 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges.
|
Samsung semiconductor
|
| KM68257C-12 KM68257CJ-12 KM68257CJ-20 KM68257CL-12 |
32Kx8 bit high speed static RAM (5V operating), 20ns
32Kx8 bit high speed static RAM (5V operating), 15ns
32Kx8 bit high speed static RAM (5V operating), 12ns
32Kx8 Bit High Speed Static RAM(5V Operating(, Evolutionary Pin out. Operated at Commercial Temperature Range. 32Kx8位高速静态RAM5V的工作（，进化引脚了。在商业温度范围工作
|
Samsung Electronic
SAMSUNG[Samsung semiconductor]
Samsung Semiconductor Co., Ltd.
|
| KM681001A KM681001A-15 KM681001A-20 |
128K x 8 Bit High-Speed CMOS Static RAM
128Kx8 Bit High Speed Static RAM(5V Operating), Evolutionary Pin out.
From old datasheet system
|
http://
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
| IS61LV5128-10 IS61LV5128-10B IS61LV5128-10BI IS61L |
IC,SRAM,512KX8,CMOS,TSOP,44PIN,PLASTIC
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO44
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 15 ns, PDSO36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PBGA36
512K x 8 HIGH-SPEED CMOS STATIC RAM 512K X 8 STANDARD SRAM, 10 ns, PDSO36
|
ISSI[Integrated Silicon Solution, Inc]
ISSI [Integrated Silicon Solution, Inc]
ISSI[Integrated Silicon Solution Inc]
Integrated Silicon Solution Inc
Integrated Silicon Solution, Inc.
|
| P4C1256-15SMLF P4C1256-15JMBLF P4C1256-25JMBLF P4C |
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 35 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, CDFP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 15 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, CDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 25 ns, PDIP28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 12 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 35 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 45 ns, PDSO28
HIGH SPEED 32K x 8 STATIC CMOS RAM 32K X 8 STANDARD SRAM, 20 ns, PDIP28
Automotive Relays; V23232A0001X005-EV-808 ( Tyco Electronics )
|
Pyramid Semiconductor Corporation
SRAM
Pyramid Semiconductor, Corp.
|
| HM6167LP-8 HM6167P-6 HM6167P-8 |
16384-word x 1-bit high speed CMOS static RAM, 100ns
16384-word x 1-bit high speed CMOS static RAM, 85ns
|
Hitachi Semiconductor
|
| BS62LV4007 BS62LV4007TIP70 BS62LV4007EC BS62LV4007 |
Asynchronous 4M(512Kx8) bits Static RAM
High Conductance Low Leakage Diode; Package: DO-35; No of Pins: 2; Container: Tape & Reel
surface mount silicon Zener diodes
Very Low Power/Voltage CMOS SRAM 512K X 8 bit 非常低功电压CMOS SRAM的为512k × 8
|
BSI[Brilliance Semiconductor]
BRILLIANCE SEMICONDUCTOR, INC.
|
| CXK591000TM/YM/M-10LL CXK591000TM/YM/M-70LL CXK591 |
131072-word x 9-bit High Speed CMOS Static RAM
131072-word x 9-bit High Speed CMOS Static RAM 131072字9位高速CMOS静态RAM
|
SONY
Vishay Intertechnology, Inc.
|
| CXK5B16120J/TM-12 |
65536-word x 16-bit High Speed Bi-CMOS Static RAM 65536字16位高速双CMOS静态RAM
65536-word x 16-bit High Speed Bi-CMOS Static RAM
|
Johnson Electric Group
SONY
|
| IC61C1024L IC61C1024 IC61C1024L-12HI IC61C1024L-15 |
128K x 8 HIGH-SPEED CMOS STATIC RAM 128K的8高速CMOS静态RAM
GT 12C 12#12 PIN RECP WALL RM 128K的8高速CMOS静态RAM
RES CH 68.1 EW 1%
ASYNCHRONOUS STATIC RAM, High Speed A.SRAM
|
Electronic Theatre Controls, Inc.
ICSI
Integrated Circuit Solution Inc
|
| K6R4016C1D K6R4016C1D-JC K6R4016V1D-JC K6R4004C1D |
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM3.3V的）。在商用和工业温度范围运
1Mx4 Bit High Speed Static RAM(3.3V Operating). Operated at Commercial and Industrial Temperature Ranges 1Mx4位高速静态RAM.3V的）。在商用和工业温度范围运
861 SOLID STATE RELAYS RoHS Compliant: Yes
|
Samsung Semiconductor Co., Ltd.
SAMSUNG SEMICONDUCTOR CO. LTD.
SAMSUNG[Samsung semiconductor]
Samsung Electronic
|
